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IRF3205 General Purpose Rectifier Diode N Channel Through Hole TO 220AB

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IRF3205 General Purpose Rectifier Diode N Channel Through Hole TO 220AB

Brand Name : IR

Model Number : IRF3205

Place of Origin : CHINA

MOQ : 10 PCS

Price : Negotiation

Payment Terms : T/T, Western Union ， ESCROW

Supply Ability : 20000PCS

Delivery Time : STOCK

Packaging Details : TUBE

Categories : Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) : 55V

Current - Continuous Drain (Id) @ 25°C : 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 8 mOhm @ 62A, 10V

Vgs(th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 146nC @ 10V

Power Dissipation (Max) : 200W (Tc)

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IRF3205 General Purpose Rectifier Diode N-Channel 55V 110A (Tc) 200W (Tc) Through Hole TO-220AB

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Product Attributes	Select All
Categories	Discrete Semiconductor Products
	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25°C	110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	8 mOhm @ 62A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	146nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3247pF @ 25V
FET Feature	-
Power Dissipation (Max)	200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

IRF3205 General Purpose Rectifier Diode N Channel Through Hole TO 220AB

Deli electronics tehcnology co ltd
www.icmemorychip.com
Email:sales3@deli-ic.com
Skype:hkdeli881
TEL:86-0755-82539981

Product Tags:

high current schottky diode

surface mount schottky diode

IRF3205 General Purpose Rectifier Diode N Channel Through Hole TO 220AB Images

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